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A research team led by Dr. Wen-Hao Chang at the Research Center for Applied Sciences, Academia Sinica, in collaboration with National Yang Ming Chiao Tung University, Taiwan Semiconductor Manufacturing Company(TSMC), National Taiwan University and the National Center for Instrumentation Research, has developed an epitaxial interface engineering strategy for high-performance two-dimensional transistors. The team grew an ultrathin epitaxial Al film directly on monolayer MoS₂ and converted it into a subnanometer Al₂O₃ interfacial layer, enabling uniform integration of high-κ HfO₂ while suppressing dielectric-induced scattering. The resulting MoS₂ top-gate transistors achieved an equivalent oxide thickness of approximately 1 nm and a peak transconductance of 0.45 mS μm⁻¹ with a gate length of approximately 100 nm. This work demonstrates a promising approach for further scaling and improving the performance of two-dimensional semiconductor devices. The research has been published on July 31, 2026 in Nature Electronics. The research was supported by Academia Sinica and the National Science and Technology Council (NSTC).